general features parameter description/value unit spectral response wavelength of maximum response photocathode window dynode direct interelectrode capacitances (approx.) base weight suitable socket suitable socket assembly nm nm mm dia. pf pf g 185 to 850 420 multialkali 15 uv glass plano-plano multialkali linear focused 10 1.7 3.5 12 pin glass base 14 e678-12d (supplied) e974-05 (option) material minimum useful size material shape secondary emitting surface structure number of stages anode to last dynode anode to all other electrodes photomultiplier tube R1464 information furnished by hamamatsu is b elieved to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. 1998 hamamatsu photonics k.k. subject to local technical requirements and regulations, availability of products included in this promotional material may vary. please consult with our sales office. high anode sensitivity at low supply voltage 19mm (3/4 inch) diameter, 10 stage, head-on type 185 to 850nm response multialkali photocathode maximum ratings (absolute maximum values) parameter value unit supply voltage average anode current (note 1) average cathode current (note 1) ambient temperature vdc vdc ma na/cm 2 c 1250 250 0.1 100 -80 to +50 between anode and cathode between anode and last dynode the hamamatsu R1464 is a 19mm (3/4") diameter, head-on type photomultiplier tube having a multialkali photocathode designed for use in uv to near ir spectrophotometers and other analysis equipments where wide range response and high gain are of impor- tance. the R1464 exhibits a high anode sensitivity at relatively low supply voltage by virtue of improvement in secondary emi tting surface, compared with the hamamatsu r663 photomultiplier tube which has the same spectral response characteristic and mechani- cal specifications as the R1464. high anode sensitivity radiant (420nm) .................................. 5.1 10 4 a/w at 1000v luminous .................................................... 120 a/lm at 1000v high quantum efficiency (290nm) ........................................ 19% wide spectral response ........................................ 185 to 850nm low anode dark current ..................................... 10 na at 1000v applications uv to near ir spectrophotometers laser detection systems photon counting systems
figure 1: typical spectral response tpmhb0536ea photomultiplier tube R1464 characteristics (at 25 c) parameter min. unit anode sensitivity (note 2) cathode sensitivity gain (note 2) anode dark current (note 2) eni (equivalent noise input) (note 6) time response a/lm a/w a/w a/w a/lm ma/w ma/w ma/w % na w ns ns 30 80 0.15 20 max. typ. 120 4.9 10 4 5.1 10 4 1.9 10 4 120 49 51 19 19 0.2 1 10 6 4 7 10 -16 2.5 27 luminous (note 3) radiant at 350nm at 420nm at 633nm luminous (note 4) radiant at 350nm at 420nm at 633nm quantum efficiency at 290nm red/white ratio (note 5) after 30 minute storage in the dark anode pulse rise time (note 2, 7) electron transit time (note 2, 8) notes 1: averaged over any interval of 30 seconds maximum. 2: the voltage distribution ratio is shown in table 1 below. 3: the light source is a tungsten filament lamp operated at a distribution tem- perature of 2856k. the light input is 0.1 micro-lumen. 4: under the same conditions as note 3 except that the light input is 10 -2 lumen and 150 volts are applied between cathode and all other electrode connected together as anode. 5: red/white ratio is quotient of the cathode current measured using a red filter (toshiba r-68) interposed between the light source and the tube by the cathode current measured with the filter removed under the same con- ditions as note 4. 6: eni is an indication of photon limited signal-to-noise ratio. it refers to the amount of light in watts to produce a signal-to-noise ratio in unity in the output of a photomultiplier tube. in this catalog the value of peak wave- length is described. eni is given by the following formula: where q = elementary charge (1.60 10 -19 coulomb) ldb = pmt anode dark current (after 30 minute storage) in amperes g = pmt gain d f = bandwidth of the system in hertz. in this catalog, 1 hz bandwidth is used. s = anode radiant sensitivity in amperes per watt at the wavelength of peak response. 7: the rise time is the time for the output pulse to rise from 10% to 90% of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse. 8: the electron transit time is the interval between the arrival of a delta func- tion light pulse at the entrance window of the tube and the time the output pulse reaches the peak amplitude. in measurement the entire photoca- thode is illuminated. supply voltage: 1000vdc, k: cathode, dy: dynode, p: anode table 1: voltage distribution ratio electrodes distribution ratio k dy1 1.5 dy2 1 dy3 1 dy4 1 dy5 1 dy6 1 dy7 1 dy8 1 dy9 111 dy10 p figure 2: anode sensitivity and gain characteristics tpmhb0537ea eni = 2q?db? d f s 100 10 1 0.1 0.01 200 400 600 800 1000 wavelength (nm) cathode radiant sensitivity (ma/w) quantum efficiency (%) cathode radiant sensitivity quantum efficiency 10 4 10 3 10 2 10 1 10 0 10 -1 10 -2 10 7 10 6 10 5 10 4 10 3 10 2 10 1 200 300 700 1000 500 1500 supply voltage (v) anode luminous sensitivity (a/lm) gain typical gain minimum anode sensitivity typical anode sensitivity
figure 3: typical time response tpmhb0538ea figure 4: typical temperature coefficient of anode sensitivity tpmhb0539ea figure 5: typical temperature characteristic of dark current (after 30 minute storage) tpmhb0540ea 200 100 80 60 40 20 10 8 6 4 2 1 300 500 700 1000 1500 supply voltage (v) time (ns) transit time rise time +1.5 +1.0 +0.5 -1.0 -0.5 0 -1.5 200 400 600 800 1000 wavelength (nm) temperature coefficient (%/ c) 10 1 0.1 0.01 0.001 -20 -40 0 +20 +40 temperature ( c) dark current (na)
tpmh1217e01 aug. 1998 hamamatsu photonics k.k., electoron tube center 314-5, shimokanzo, toyooka-village, iwata-gun, shizuoka-ken, 438-0193, japan, telephone: (81)539/62-5248, fax: (81)539/62-2205 u.s.a.: hamamatsu corporation: 360 foothill road, p. o. box 6910, bridgewater. n.j. 08807-0910, u.s.a., telephone: (1)908-231-0960, f ax: (1)908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49)8152-375-0, fa x: (49)8152-2658 france: hamamatsu photonics france s.a.r.l.: 8, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, telephone: (33 )1 69 53 71 00, fax: (33)1 69 53 71 10 united kingdom: hamamatsu photonics uk limited: lough point, 2 gladbeck way, windmill hill, enfield, middlesex en2 7ja, united kingdom, telepho ne: (44)181-367-3560, fax: (44)181-367-6384 north europe: hamamatsu photonics norden ab: f?r?gatan 7, s-164-40 kista sweden, telephone: (46)8-703-29-50, fax: (46)8-750-58-95 italy: hamamatsu photonics italia: s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39)02-935 81 733, fax: ( 39)02-935 81 741 tacca0047ea tacca0099ea tpmha0434ea figure 6: dimensional outline (unit: mm) figure 7: optional socket assembly e974-13 (unit: mm) photomultiplier tube R1464 socket (e678-12l) the e974-13 is socket assembly specifically designed for 3/4 inch diameter, 10 stage, head-on type photomultiplier tubes having a 12-pin glass base. it contains a voltage-divider network potted with silicone rubber, thus eliminating troublesome soldering for making up the divider network. warning - personal safety hazards electrical shock ?operating voltage applied to this device presents shock hazard. 18.6 0.7 faceplate photocathode 88 2 13max. 12 pin base dy3 dy5 dy7 dy9 p short pin 1 2 3 4 5 6 7 8 9 10 11 12 dy10 dy8 dy6 dy4 dy2 k dy1 15min. 35 9 3.7 (23.6) 28.6 13 6.7 360 13 9.5 3.3 10.5 (8) 18 2 7 18 13 2 2-r4 2- 3.2 23.0 0.2 47.5 1.0 450 10 43.0 0.5 17.4 0.2 r1 r2 to r11 c1 to c3 : 510k w : 330k w : 0.01 f r11 r10 r9 r8 r7 r6 r5 r4 r3 r2 r1 dy10 dy9 dy8 dy7 dy6 dy5 dy4 dy3 dy2 dy1 c3 c2 c1 signal gnd signal output rg-174/u (black) -hv awg22 (violet) p k 5 power supply gnd (black) awg22 socket pin no. pmt 6 4 7 3 8 2 9 1 10 12 11 potting compound housing (insulator)
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